PMZ320UPE_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – 30 V, P-channel Trench MOSFET

NXP Semiconductors
-4
I_D
(A)
-3
aaa-017070
T_j = 25 °C
T_j = 150 °C
PMZ320UPE
30 V, P-channel Trench MOSFET
2.0
a
1.5
aaa-017071
-2
1.0
-1
0.5
0
0
-1
-2
V_DS > I_D x R_DSon
-3
-4
V_GS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
T_j (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
-1.5
V_GS(th)
(V)
-1.0
-0.5
aaa-017072
(1)
(2)
(3)
10³
C
(pF)
10²
10
aaa-017073
(1)
(2)
(3)
-0
-60
0
60
I_D = -250 µA; V_DS = V_GS
(1) maximum values
(2) typical values
(3) maximum values
120
180
T_j (°C)
Fig. 12. Gate-source threshold voltage as a function of
ambient temperature
1
-10^-1
-1
-10
-10²
V_DS (V)
f = 1 MHz; V_GS = 0 V
(1) C_iss
(2) C_oss
(3) C_rss
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMZ320UPE
Product data sheet
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24 March 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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