PMXB65ENE_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – 30 V, N-channel Trench MOSFET

NXP Semiconductors
PMXB65ENE
30 V, N-channel Trench MOSFET
12
I_D
(A)
8
aaa-008905
2
a
1.5
aaa-008897
1
4
T_j = 25 °C
0.5
T_j = 150 °C
0
0
1
2
V_DS > I_D × R_DSon
3
4
V_GS (V)
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
T_j (°C)
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
4
V_GS(th)
(V)
3
aaa-008907
10³
C
(pF)
10²
aaa-008909
C_iss
2
max
10
1
typ
min
C_oss
C_rss
0
-60
0
60
120
180
T_j(°C)
I_D = 0.25 mA; V_DS = V_GS
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
1
0,1
1
f = 1 MHz; V_GS = 0 V
10
100
V_DS (V)
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMXB65ENE
Product data sheet
All information provided in this document is subject to legal disclaimers.
20 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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