PMXB40UNE_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – 12 V, N-channel Trench MOSFET

NXP Semiconductors
PMXB40UNE
12 V, N-channel Trench MOSFET
10
I_D
(A)
8
aaa-008990
2
a
1.5
aaa-008991
6
1
4
2
T_j = 150 °C
0
0
0.5
V_DS > I_D × R_DSon
T_j = 25 °C
1
1.5
2
V_GS (V)
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.5
0
-60
0
60
120
180
T_j (°C)
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
1.25
V_GS(th)
(V)
1.00
aaa-008992
10³
C
(pF)
aaa-008993
C_iss
0.75
0.50
max
C_rss
10²
C_oss
typ
0.25
0
-60
0
60
I_D = 0.25 mA; V_DS = V_GS
min
120
180
T_j(°C)
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
10
10^-1
1
f = 1 MHz; V_GS = 0 V
10
10²
V_DS (V)
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMXB40UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 September 2013
© NXP N.V. 2013. All rights reserved
8 / 15