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PMWD20XN Datasheet, PDF (8/12 Pages) NXP Semiconductors – Dual N-channel UTrenchMOS extremely low level FET | |||
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Philips Semiconductors
PMWD20XN
Dual N-channel µTrenchMOS⢠extremely low level FET
5
VGS
(V)
4
03ao97
3
2
1
0
0
5
10
15
QG (nC)
ID = 4 A; VDD = 10 V
Fig 13. Gate-source voltage as a function of gate charge; typical values
9397 750 14721
Product data sheet
Rev. 02 â 26 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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