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| PMV30XN Datasheet, PDF (8/15 Pages) NXP Semiconductors – 20 V, 3.2 A N-channel Trench MOSFET | |||
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NXP Semiconductors
PMV30XN
20 V, 3.2 A N-channel Trench MOSFET
5
VGS
(V)
4
017aaa271
3
2
1
0
0
1
2
3
4
5
QG (nC)
ID = 3 A; VDS = 10 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values
2.5
IS
(A)
2.0
1.5
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
017aaa137
Fig 15. Gate charge waveform definitions
017aaa272
(1)
(2)
1.0
0.5
0.0
0.0
0.2
0.4
0.6
0.8
VSD (V)
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig 16. Source current as a function of source-drain voltage; typical values
PMV30XN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 â 22 June 2011
© NXP B.V. 2011. All rights reserved.
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