PMF170XP_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – 20 V, 1 A P-channel Trench MOSFET

NXP Semiconductors
PMF170XP
20 V, 1 A P-channel Trench MOSFET
-4
I_D
(A)
-3
017aaa306
(1)
(2)
1.6
a
1.4
017aaa307
1.2
-2
1.0
-1
0.8
(2)
(1)
0
0
-1
V_DS > I_D × R_DSon
(1) T_j = 25 °C
(2) T_j = 150 °C
-2
-3
V_GS (V)
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.6
-60
0
60
120
180
T_j (°C)
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
- 1.6
V_GS(th)
(V)
- 1.2
- 0.8
017aaa134
(1)
(2)
10³
C
(pF)
10²
017aaa308
C_iss
(3)
- 0.4
C_oss
C_rss
0.0
- 60
0
60
I_D = -0.25 mA; V_DS = V_GS
(1) maximum values
(2) typical values
(3) minimum values
120
180
T_j (°C)
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
10
-10^-1
-1
f = 1 MHz; V_GS = 0 V
(1) C_iss
(2) C_oss
(3) C_rss
-10
-10²
V_DS (V)
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMF170XP
Product data sheet
All information provided in this document is subject to legal disclaimers.
29 October 2013
© NXP N.V. 2013. All rights reserved
8 / 15