PHP101NQ04T Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

Philips Semiconductors
PHP/PHB101NQ04T
N-channel TrenchMOS™ standard level FET
80
IS ^{VGS = 0 V}
(A)
60
03aq96
40
175 °C
Tj = 25 °C
20
10
VGS
(V)
8
ID = 25 A
Tj = 25 °C
6
4
2
14 V
03aq98
VDD = 32 V
0
0
0.3
0.6
0.9
1.2
VSD (V)
0
0
10
20
30 _{QG (nC)} 40
T_j = 25 °C and 175 °C; V_GS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I_D = 25 A; V_DD = 14 V and 32 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 13167
Product data
Rev. 01 — 12 May 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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