PHK28NQ03LT Datasheet, PDF (8/12 Pages) NXP Semiconductors – TrenchMOS logic level FET

Philips Semiconductors
PHK28NQ03LT
TrenchMOS™ logic level FET
30
IS
(A)
VGS = 0 V
20
03ak89
10
VGS
(V)
8
ID = 14 A
Tj = 25 °C
VDD = 15 V
6
03ak91
4
10
150 °C
Tj = 25 °C
2
0
0
0.3
0.6
0.9 _{VSD (V)} 1.2
0
0
20
40
60 _{QG (nC)} 80
T_j = 25 °C and 150 °C; V_GS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
I_D = 14 A; V_DD = 15 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
9397 750 10743
Product data
Rev. 01 — 12 December 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
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