PESD12VS2UT Datasheet, PDF (8/13 Pages) NXP Semiconductors – Double ESD protection diodes in SOT23 package

Philips Semiconductors
Double ESD protection diodes
in SOT23 package
10
I_R
I_R(25˚C)
1
001aaa270
(1)
10^−1
−100
−50
0
50
100
150
T_j (°C)
(1) PESD3V3S2UT; V_RWM = 3.3 V.
PESD5V2S2UT; V_RWM = 5 V.
I_R is less than 10 nA at 150 °C for:
PESD12V52UT; V_RWM = 12 V.
PESD15VS2UT; V_RWM = 15 V.
PESD24VS2UT; V_RWM = 24 V.
Fig.8 Relative variation of reverse leakage
current as a function of junction
temperature; typical values.
Product specification
PESDxS2UT series
2004 Apr 15
8