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PBSS9110D_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – 100 V, 1 A PNP low VCEsat (BISS) transistor | |||
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NXP Semiconductors
8. Test information
PBSS9110D
100 V, 1 A PNP low VCEsat (BISS) transistor
âIB
90 %
10 %
âIC
90 %
âIBon (100 %)
input pulse
(idealized waveform)
â I Boff
output pulse
(idealized waveform)
âIC (100 %)
10 %
td
tr
t on
Fig 12. BISS transistor switching time definition
ts
t off
t
tf
006aaa266
VBB
VCC
(probe)
oscilloscope
450 Ω
VI
RB
R2
R1
RC
Vo (probe)
oscilloscope
450 Ω
DUT
mgd624
VCC = â10 V; IC = â0.5 A; IBon = â0.025 A; IBoff = 0.025 A
Fig 13. Test circuit for switching times
PBSS9110D_3
Product data sheet
Rev. 03 â 22 November 2009
© NXP B.V. 2009. All rights reserved.
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