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PBSS8110T_15 Datasheet, PDF (8/12 Pages) NXP Semiconductors – NPN low VCEsat (BISS) transistor 100 V, 1 A
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NXP Semiconductors
100 V, 1 A
NPN low VCEsat (BISS) transistor
10
VCEsat
(V)
1
mle357
10−1
10
handbook, halfpage
VBEsat
(V)
1
(1)
(2)
(3)
Product data sheet
PBSS8110T
MLE363
10−120−1
1
10
10−2
10−3
10−4
IC (mA)
IC/IB = 50.
Tamb = 25 °C.
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
10−1
10−1
1
10
102
103
104
IC (mA)
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
10
handbook, halfpage
VBEsat
(V)
1
MLE364
handbook, h1alfpage
VBEsat
(V)
MLE365
10−1
10−1
1
10
102
103
104
IC (mA)
10−1
10−1
10
10
102
103
104
IC (mA)
IC/IB = 20.
Tamb = 25 °C.
Fig.11 Base-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 50.
Tamb = 25 °C.
Fig.12 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Dec 22
8
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