PBSS4350X_15 Datasheet, PDF (8/12 Pages) NXP Semiconductors – NPN low VCEsat (BISS) transistor 50 V, 3 A

Philips Semiconductors
50 V, 3 A
NPN low V_CEsat (BISS) transistor
800
handbook, halfpage
hFE
(1)
600
(2)
400
(3)
200
MLE181
010_−1
1
V_CE = 2 V.
(1) T_amb = 100 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
10
10²
10³
10⁴
IC (mA)
Fig.6 DC current gain as a function of collector
current; typical values.
Product specification
PBSS4350X
1.2
handbook, halfpage
VBE
(V)
0.8
0.4
MLE180
(1)
(2)
(3)
010_−1
1
V_CE = 2 V.
(1) T_amb = −55 °C.
(2) T_amb = 25 °C.
(3) T_amb = 100 °C.
10
10²
10³
10⁴
IC (mA)
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
1
handbook, halfpage
VCEsat
(V)
10^−1
10^−2
MLE183
(1)
(2)
(3)
1
handbook, halfpage
VCEsat
(V)
10^−1
(1)
(2)
10^−2
(3)
MLE184
10^−3
10^−1
1
I_C/I_B = 20.
(1) T_amb = 100 °C.
(2) T_amb = 25 °C.
(3) T_amb = −55 °C.
10
10²
10³
10⁴
IC (mA)
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
10^−3
10^−1
1
T_amb = 25 °C.
(1) I_C/I_B = 100.
(2) I_C/I_B = 50.
(3) I_C/I_B = 10.
10
10²
10³
10⁴
IC (mA)
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Nov 04
8