English
Language : 

PBSS4160DS Datasheet, PDF (8/14 Pages) NXP Semiconductors – 60 V 1 A NPN/NPN low VCEsat (BISS) transistor
◁
Philips Semiconductors
PBSS4160DS
60 V, 1 A NPN/NPN low VCEsat (BISS) transistor
1.2
VBEsat
(V)
1.0
0.8
(1)
(2)
0.6
(3)
0.4
006aaa509
103
RCEsat
(Ω)
102
10
1
006aaa515
(1)
(2)
(3)
0.2
10−1
1
10
102
103
104
IC (mA)
10−1
10−1
1
10
102
103
104
IC (mA)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 9. Base-emitter saturation voltage as a function of
collector current; typical values
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
2.0
IC
(A)
1.6
1.2
0.8
006aaa511
IB (mA) = 65.0
58.5
52.0 45.5
39.0 32.5
26.0
19.5
13.0
6.5
0.4
0
0
1
2
3
4
5
VCE (V)
Tamb = 25 °C
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
103
RCEsat
(Ω)
102
006aaa516
10
(1)
1
(2)
10−1
10−1
1
(3)
10
102
103
104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS4160DS_2
Product data sheet
Rev. 02 — 27 June 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
8 of 14
 ▷