PBSS4032PZ_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – 30 V, 4.4 A PNP low VCEsat (BISS) transistor

NXP Semiconductors
PBSS4032PZ
30 V, 4.4 A PNP low V_CEsat (BISS) transistor
−1
006aac148
−1
006aac149
V_CEsat
(V)
−10^−1
(1)
(2)
(3)
V_CEsat
(V)
(1)
−10^−1
(2)
(3)
−10^−2
−10^−1 −1
−10 −10² −10³ −10⁴ −10⁵
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
10³
R_CEsat
(Ω)
10²
006aac150
−10^−2
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
(3) I_C/I_B = 10
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
10³
R_CEsat
(Ω)
10²
006aac151
10
(1)
1
(2)
10^−1
(3)
10^−2
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
I_C/I_B = 20
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
10
1
10^−1
(1)
(2)
(3)
10^−2
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
T_amb = 25 °C
(1) I_C/I_B = 100
(2) I_C/I_B = 50
(3) I_C/I_B = 10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS4032PZ_1
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 31 March 2010
© NXP B.V. 2010. All rights reserved.
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