NX3008PBKW_15 Datasheet, PDF (8/16 Pages) NXP Semiconductors – 30 V, 200 mA P-channel Trench MOSFET

NXP Semiconductors
NX3008PBKW
30 V, 200 mA P-channel Trench MOSFET
-0.25
I_D
(A)
-0.20
-0.15
-0.10
-0.05
001aao260
(1)
(2)
2.0
a
1.5
1.0
0.5
001aao261
0.00
0
-1
-2
-3
V_GS (V)
V_DS > I_D x R_DSon
(1) T_j = 25 °C
(2) T_j = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0.0
-60
0
60
120
180
T_j (˚C)
Fig 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical
values
-1.5
V_GS(th)
(V)
-1.0
-0.5
001aao262
(1)
(2)
(3)
10²
C
(pF)
10
001aao263
(1)
(2)
(3)
0.0
-60
0
60
120
180
T_j (˚C)
I_D = -0.25 mA; V_DS = V_GS
(1) maximum values
(2) typical values
(3) minimum values
Fig 12. Gate-source threshold voltage as a function of
junction temperature
1
-10^-1
-1
-10
-10²
V_DS (V)
f = 1 MHz; V_GS = 0 V
(1)C_iss
(2)C_oss
(3)C_rss
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
NX3008PBKW
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 1 August 2011
© NXP B.V. 2011. All rights reserved.
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