BUW12W Datasheet, PDF (8/12 Pages) NXP Semiconductors – Silicon diffused power transistors

Philips Semiconductors
Silicon diffused power transistors
Product specification
BUW12W; BUW12AW
10
handbook, halfpage
VCEsat
(V)
1
(1) (2) (3)
MGB872
10²
handbook, halfpage
hFE
10
MBC096
VCE = 5 V
1V
10^−1
10^−2
10^−1
1
IB (A) ¹⁰
(1) I_C = 3 A.
(2) I_C = 6 A.
(3) I_C = 8 A.
T_j = 25 °C; solid line: typical values; dotted line: maximum values.
Fig.9 Collector-emitter saturation voltage as a
function of base current.
1
10^−2
10^−1
1
10 _{IC (A)} 10²
Fig.10 DC current gain; typical values.
handbook, halfpage
VIM
0
tp
T
VCC
RL
RB
D.U.T.
MGE244
V_CC = 250 V; t_p = 20 µs; V_IM = −6 to +8 V; t_p/T = 0.01.
The values of R_B and R_L are selected in accordance with I_Con and
I_Bon requirements.
Fig.11 Test circuit resistive load.
handbook, halfpage
tr
90%
−IB
10%
90%
−IC
10%
ton
MBB730
−IB _on
t
−IB _off
−IC _on
tf
t
ts
toff
Fig.12 Switching time waveforms with
resistive load.
1997 Aug 14
7