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BUT18F Datasheet, PDF (8/12 Pages) NXP Semiconductors – Silicon diffused power transistors
Philips Semiconductors
Silicon diffused power transistors
Product specification
BUT18F; BUT18AF
handbook, halfpage
+IB
−VBE
VCC
LC
LB
D.U.T.
VCL
MGE246
VCL = 300 V; VCC = 30 V; VBE = −5 V; LB = 1 µH; LC = 200 µH.
Fig.12 Test circuit inductive load.
handbook, halfpage
tr
90%
IB
10%
90%
IB on
t
−IB off
IC on
IC
10%
tf
ts
toff
t
MGE238
Fig.13 Switching time waveforms with
inductive load.
1999 Jun 11
8