BUK9Y6R0-60E_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56

NXP Semiconductors
BUK9Y6R0-60E
N-channel 60 V, 6.0 mΩ logic level MOSFET in LFPAK56
2.4
a
1.6
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0.8
0
-60
0
60
120
180
T_{j (}°C)
Fig. 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig. 13. Gate charge waveform definitions
10
V_GS
(V)
8
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6
V_DS= 14V
4
V_DS= 48V
2
0
0
20
40
60
80
Q_G (nC)
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
10⁴
C
(pF)
10³
10²
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C_iss
C_oss
C_rss
10
10^-1
1
10 _VDS(V) 10²
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
BUK9Y6R0-60E
Product data sheet
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8 May 2013
© NXP B.V. 2013. All rights reserved
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