BUK969R0-60E_15 Datasheet, PDF (8/12 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
10
V_GS
(V)
8
6
14 V
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4
V_DS= 48V
2
0
0
20
40 _{QG (nC)} 60
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
BUK969R0-60E
N-channel TrenchMOS logic level FET
10⁴
C
(pF)
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C_iss
10³
10²
10^-1
1
C_oss
C_rss
10 _VDS(V) 10²
Fig. 15. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
200
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I_S
(A)
150
100
T_j = 175°C
T_j = 25 °C
50
0
0
0.5
1 _VSD(V) 1.5
Fig. 16. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK969R0-60E
Product data sheet
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13 July 2012
© NXP B.V. 2012. All rights reserved
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