BUK9507-30B_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS logic level FET

NXP Semiconductors
BUK9507-30B
N-channel TrenchMOS logic level FET
100
I_D
(A)
75
50
25
0
0
03nn14
Tj = 175 °C
Tj = 25 °C
1
2
3
4
V_GS (V)
2.5
V_GS(th)
(V)
2.0
1.5
1.0
0.5
0
−60
0
max
typ
min
03ng52
60
120
180
T_j (°C)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source threshold voltage as a function of
function of gate-source voltage; typical values
junction temperature
20
03nn17
2
R_DSon
(mΩ)
Label is V_GS (V)
a
3.2 3.4
15
1.5
03aa27
3.6 3.8 4
10
1
5
10
5
0.5
0
0
40
80
120
160
I_D (A)
0
−60
0
60
120 _{Tj (°C)} 180
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
BUK9507-30B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 31 January 2011
© NXP B.V. 2011. All rights reserved.
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