BUK7C10-75AITE_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7C10-75AITE
N-channel TrenchPLUS standard level FET
350
ID
(A)
280
210
140
70
0
0
10
20
03ni74
9
label is VGS (V)
8.5 ₈
7.5
7
6.5
6
5.5
5
4.5
2
4
6
8
10
VDS (V)
18
RDSon
(mΩ)
14
03ni76
10
6
5
10
15 _{VGS (V)} 20
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
20
RDSon
(mΩ)
VGS = 5.5 V _{6 V 6.5 V} ^{7 V}
16
03ni75
8V
10 V
2.4
a
1.6
03nb25
20 V
12
0.8
8
0
70
140
210
280 _{ID (A)350}
0
−60
0
60
120
180
T_j (°C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7C10-75AITE_3
Product data sheet
Rev. 03 — 17 February 2009
© NXP B.V. 2009. All rights reserved.
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