BUK762R4-60E_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK762R4-60E
N-channel TrenchMOS standard level FET
10^-1
I_D
(A)
10^-2
10^-3
10^-4
10^-5
10^-6
0
003aah028
min
typ max
2
4
6
V_GS (V)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
2.4
a
1.8
003aag814
1.2
0.6
0
-60
0
60
120
180
T_j (°C)
6
R_DSon
4.5
(mΩ)
5
V_GS (V) = 5.0
003aaf500
4
5.5
3
7.0
10.0
2
20.0
1
0
0
60
120
180
T_j = 25 °C; t_p = 300 µs
240
300
I_D (A)
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 13. Gate charge waveform definitions
BUK762R4-60E
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 16 May 2012
© NXP B.V. 2012. All rights reserved.
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