BUK7606-55A_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
03ne89
2
a
1.5
1
0.5
0
-60
0
60
120
180
Tj (°C)
BUK7606-55A
N-channel TrenchMOS standard level FET
C ⁹⁰⁰⁰
(pF)
8000
7000
C_iss
C_oss
6000
5000
C_rss
4000
3000
2000
1000
0
10^−2
10^−1
1
03nf31
10
10²
V_DS (V)
Fig 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
100
I_S
(A)
80
Fig 14. Input and reverse transfer capacitances as a
function of drain-source voltage; typical values
03nf24
60
40
20
0
0
T_j = 175 °C
0.2
0.4
0.6
T_j = 25 °C
0.8
1.0
V_SD (V)
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
BUK7606-55A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 03 — 1 February 2011
© NXP B.V. 2011. All rights reserved.
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