BUK7535-100A_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7535-100A
N-channel TrenchMOS standard level FET
50
I_D
(A)
40
30
20
10
0
0
Tj = 175 °C
2
4
03nd31
Tj = 25 °C
6
8
V_GS (V)
10
VGS
(V)
8
6
4
2
0
0
03nd29
V_DD = 14V
V_DD = 80V
20
40
60
Q_G (nC)
Fig 9. Transfer characteristics: drain current as a
Fig 10. Gate-source voltage as a function of turn-on
function of gate-source voltage; typical values
gate charge; typical values
5
V_GS(th)
(V)
4
max
03aa32
80
R_DSon
(mΩ)
60
5.5 6 6.5
V_GS (V) = 8
7
03nd34
10
3
typ
40
2
min
20
1
0
−60
0
60
120
180
T_j (°C)
0
0
50
100
150
I_D (A)
Fig 11. Gate-source threshold voltage as a function of Fig 12. Drain-source on-state resistance as a function
junction temperature
of drain current; typical values
BUK7535-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 21 February 2011
© NXP B.V. 2011. All rights reserved.
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