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BUK7528-100A_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET | |||
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NXP Semiconductors
BUK7528-100A
N-channel TrenchMOS standard level FET
10â1
ID
(A)
10â2
003aaf164
10â3
10â4
2%
typical 98 %
10â5
10â6
0
1
2
3
4
5
VGS (V)
Tj = 25 °C; VDS = VGS
Fig 13. Sub-threshold drain current as a function of
gate-source voltage
10
VGS
(V)
8
003aaf166
6
VDD = 14 V
VDD = 44 V
4
2
0
0
50
100
150
QG (nC)
Tj = 25 °C; ID = 25 A
Fig 15. Gate-source voltage as a function of gate
charge; typical values
5
C
Ciss
(nF)
4
003aaf165
3 Coss
2 Crss
1
0
10â2
10â1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
100
IF
(A)
80
003aaf167
60
Tj = 175 °C
Tj = 25 °C
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VSDS (V)
VGS = 0 V
Fig 16. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values
BUK7528-100A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 â 26 April 2011
© NXP B.V. 2011. All rights reserved.
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