BUK7520-100A Datasheet, PDF (8/15 Pages) NXP Semiconductors – TrenchMOS standard level FET

Philips Semiconductors
BUK7520-100A; BUK7620-100A
TrenchMOS™ standard level FET
100
03nd51
10
03nd49
ID
(A)
VGS
(V)
80
8
VDD = 14V
VDD = 80V
60
6
40
Tj = 175 ^oC
20
Tj = 25 ^oC
0
0
2
4
6
8
VGS (V)
V_DS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
4
2
0
0
20
40
60
80
100
QG (nC)
T_j = 25 °C; I_D = 25 A
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
120
IS
(A)
100
80
60
03nd48
Tj = 175 ^oC
Tj = 25 ^oC
40
20
0
0.0
0.5
1.0 _{VDS (V)} 1.5
V_GS = 0 V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 07885
Product specification
Rev. 01 — 5 February 2001
© Philips Electronics N.V. 2001. All rights reserved.
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