BUK7508-40B_15 Datasheet, PDF (8/14 Pages) NXP Semiconductors – N-channel TrenchMOS standard level FET

NXP Semiconductors
BUK7508-40B
N-channel TrenchMOS standard level FET
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
003aab852
max
typ
min
60
120
160
T_j (°C)
10^−1
I_D
(A)
10^−2
10^−3
10^−4
10^−5
10^−6
0
003aab853
min typ max
2
4
6
V_GS (V)
Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
14
R_DSon
(mΩ)
12
003aac075
2
a
1.5
003aab851
10
1
8
0.5
6
4
5
10
15
20
V_GS (V)
0
−60
0
60
120
180
T_j (°C)
Fig 11. Drain-source on-state resistance as a function Fig 12. Normalized drain-source on-state resistance
of gate-source voltage; typical values
factor as a function of junction temperature
BUK7508-40B
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 05 — 24 March 2011
© NXP B.V. 2011. All rights reserved.
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