BUK7109-75ATE_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel TrenchPLUS standard level FET

NXP Semiconductors
BUK7109-75ATE
N-channel TrenchPLUS standard level FET
350
03ni80
ID
10
9
8.5
label is VGS (V)
(A)
20
8
280
7.5
210
7
6.5
140
6
70
5.5
5
4.5
0
0
2
4
6
8 _{VDS (V)10}
16
RDSon
(mΩ)
14
12
10
8
6
5
03ni82
10
15 _{VGS (V)} 20
Fig 5. Output characteristics: drain current as a
Fig 6. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
20
RDSon
(mΩ)
15
VGS = 5.5V ^{6 V}
6.5V 7 V
03ni81
2.4
a
1.6
03nb25
10
8V
0.8
5
10 V
20 V
0
0
100
200
300 _{ID (A)} 400
0
−60
0
60
120
180
T_j (°C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK7109-75ATE_2
Product data sheet
Rev. 02 — 10 February 2009
© NXP B.V. 2009. All rights reserved.
8 of 15