BSS138P_15 Datasheet, PDF (8/16 Pages) NXP Semiconductors – 60 V, 360 mA N-channel Trench MOSFET

NXP Semiconductors
BSS138P
60 V, 360 mA N-channel Trench MOSFET
0.8
I_D
(A)
0.6
017aaa116
(1) (2)
2.4
a
1.8
017aaa022
0.4
1.2
0.2
0.6
(2)
(1)
0.0
0.0
1.0
2.0
3.0
V_GS (V)
0.0
−60
0
60
120
180
T_amb (°C)
V_DS > I_D × R_DSon
(1) T_amb = 25 °C
(2) T_amb = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
a = --------^R----^D---^S---^o---ⁿ--------
R _{D S o n ( 25 ° C )}
Fig 11. Normalized drain-source on-state resistance
as a function of ambient temperature; typical
values
2.0
V_GS(th)
(V)
1.5
1.0
0.5
017aaa117
(1)
(2)
(3)
10²
(1)
C
(pF)
(2)
10
(3)
017aaa118
0.0
−60
0
60
120
180
T_amb (°C)
1
10^−1
1
10
10²
V_DS (V)
I_D = 0.25 mA; V_DS = V_GS
(1) maximum values
(2) typical values
(3) minimum values
Fig 12. Gate-source threshold voltage as a function of
ambient temperature
f = 1 MHz; V_GS = 0 V
(1) C_iss
(2) C_oss
(3) C_rss
Fig 13. Input, output and reverse transfer
capacitances as a function of drain-source
voltage; typical values
BSS138P
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 2 November 2010
© NXP B.V. 2010. All rights reserved.
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