BLF8G22LS-240_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – Power LDMOS transistor

NXP Semiconductors
BLF8G22LS-240
Power LDMOS transistor

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V_DS = 28 V; I_Dq = 2000 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 13. Input return loss as a function of load power; typical values

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3_/ :
V_DS = 28 V; I_Dq = 2000 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 14. Adjacent channel power ratio (5 MHz) as a
function of load power; typical values

        
3_/ :
V_DS = 28 V; I_Dq = 2000 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 15. Adjacent channel power ratio (10 MHz) as a
function of load power; typical values
BLF8G22LS-240
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 7 March 2013
© NXP B.V. 2013. All rights reserved.
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