BF909 Datasheet, PDF (8/11 Pages) NXP Semiconductors – N-channel dual gate MOS-FETs

Philips Semiconductors
N-channel dual gate MOS-FETs
Product specification
BF909; BF909R
10 ²
y _fs
(mS)
10
MLB948
10 ²
handbook¹,⁰halfpage
y _fs
yos
ϕ_fs
(mS)
(deg)
1
ϕ_fs
10
10 ¹
MLB949
bos
gos
1
10
10²
f (MHz)
1
10 ³
V_DS = 5 V; V_G2 = 4 V.
I_D = 15 mA; T_amb = 25 °C.
Fig.16 Forward transfer admittance and phase as
a function of frequency; typical values.
10 ²
10
10²
f (MHz)
10 ³
V_DS = 5 V; V_G2 = 4 V.
I_D = 15 mA; T_amb = 25 °C.
Fig.17 Output admittance as a function of
frequency; typical values.
VAGC
R1
10 k Ω
C1
4.7 nF
C3 12 pF
RGEN
50 Ω
VI
C2
R2
50 Ω
4.7 nF
R _G1
VGG
DUT
R3
10 Ω
C5
2.2
pF
L1
≈ 350 nH
C4
4.7 nF
VDS
RL
50 Ω
MLD151
1995 Apr 25
Fig.18 Cross-modulation test set-up.
8