BF1101 Datasheet, PDF (8/16 Pages) NXP Semiconductors – N-channel dual-gate MOS-FETs

Philips Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1101; BF1101R; BF1101WR
handbook¹, ⁰ha²lfpage
yis
(mS)
10
MGS311
1
10^−1
10
bis
gis
10²
f (MHz)
10³
V_DS = 5 V; V_G2 = 4 V.
I_D = 12 mA; T_amb = 25 °C.
Fig.17 Input admittance as a function of frequency;
typical values.
handbook¹, ⁰ha²lfpage
|yrs|
(mS)
10
ϕ _rs
|yrs|
MGS312 _−102
ϕ _rs
(deg)
−10
1
−1
10
10²
f (MHz)
10³
V_DS = 5 V; V_G2 = 4 V.
I_D = 12 mA; T_amb = 25 °C.
Fig.18 Reverse transfer admittance and phase as
a function of frequency; typical values.
handbook¹, ⁰ha²lfpage
|yfs|
(mS)
10
MGS313 _−102
ϕ _fs
| y _fs|
(deg)
ϕ _fs
−10
handbook, ¹h⁰alfpage
yos
(mS)
1
MGS314
bos
gos
1
−1
10^−1
10
10²
f (MHz)
10³
10
10²
f (MHz)
10³
V_DS = 5 V; V_G2 = 4 V.
I_D = 12 mA; T_amb = 25 °C.
Fig.19 Forward transfer admittance and phase as
a function of frequency; typical values.
V_DS = 5 V; V_G2 = 4 V.
I_D = 12 mA; T_amb = 25 °C.
Fig.20 Output admittance as a function of
frequency; typical values.
1999 May 14
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