BC847 Datasheet, PDF (8/18 Pages) STMicroelectronics – SMALL SIGNAL NPN TRANSISTORS

NXP Semiconductors
BC847 series
45 V, 100 mA NPN general-purpose transistors
1200
h_FE
1000
(1)
800
600
(2)
mgt731
1200
V_BE
(mV)
1000
800
600
mgt732
(1)
(2)
400
(3)
200
400
(3)
200
0
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 5 V
(1) T_amb = 150 C
(2) T_amb = 25 C
(3) T_amb = 55 C
Fig 9. Group C: DC current gain as a function of
collector current; typical values
0
10^−2
10^−1
1
10
10²
10³
I_C (mA)
V_CE = 5 V
(1) T_amb = 55 C
(2) T_amb = 25 C
(3) T_amb = 150 C
Fig 10. Group C: Base-emitter voltage as a function of
collector current; typical values
10⁴
V_CEsat
(mV)
10³
mgt733
10²
(1)
(3) (2)
10
10^−1
1
10
10²
10³
I_C (mA)
I_C/I_B = 20
(1) T_amb = 150 C
(2) T_amb = 25 C
(3) T_amb = 55 C
Fig 11. Group C: Collector-emitter saturation voltage
as a function of collector current; typical
values
1200
V_BEsat
(mV)
1000
(1)
800
(2)
600
(3)
400
mgt734
200
0
10^−1
1
10
10²
10³
I_C (mA)
I_C/I_B = 10
(1) T_amb = 55 C
(2) T_amb = 25 C
(3) T_amb = 150 C
Fig 12. Group C: Base-emitter saturation voltage as a
function of collector current; typical values
BC847_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 8 — 20 August 2012
© NXP B.V. 2012. All rights reserved.
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