74AUP1G04 Datasheet, PDF (8/16 Pages) NXP Semiconductors – Low-power inverter

Philips Semiconductors
74AUP1G04
Low-power inverter
Table 8. Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8
Symbol Parameter
Conditions
T_amb = 25 °C
C_PD
power dissipation capacitance f = 1 MHz; V_I = GND to V_CC
V_CC = 0.8 V
V_CC = 1.1 V to 1.3 V
V_CC = 1.4 V to 1.6 V
V_CC = 1.65 V to 1.95 V
V_CC = 2.3 V to 2.7 V
V_CC = 3.0 V to 3.6 V
Min
[2]
-
-
-
-
-
-
[1] All typical values are measured at nominal V_CC.
[2] C_PD is used to determine the dynamic power dissipation (P_D in µW).
P_D = C_PD × V_CC2 × f_i × N + Σ(C_L × V_CC2 × f_o) where:
f_i = input frequency in MHz;
f_o = output frequency in MHz;
C_L = output load capacitance in pF;
V_CC = supply voltage in V;
N = number of inputs switching;
Σ(C_L × V_CC2 × f_o) = sum of the outputs.
Typ ^[1] Max
Unit
2.5
-
pF
2.7
-
pF
2.8
-
pF
3.0
-
pF
3.5
-
pF
4.0
-
pF
Table 9. Dynamic characteristics
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 8
Symbol Parameter
Conditions
−40 °C to +85 °C
Min
Max
C_L = 5 pF
t_PHL, t_PLH
HIGH-to-LOW and
LOW-to-HIGH
propagation delay
A to Y
see Figure 7
V_CC = 1.1 V to 1.3 V
V_CC = 1.4 V to 1.6 V
V_CC = 1.65 V to 1.95 V
2.1
11.4
1.6
7.4
1.4
5.9
V_CC = 2.3 V to 2.7 V
1.1
4.5
C_L = 10 pF
V_CC = 3.0 V to 3.6 V
1.0
3.9
t_PHL, t_PLH
HIGH-to-LOW and
LOW-to-HIGH
propagation delay
A to Y
see Figure 7
V_CC = 1.1 V to 1.3 V
V_CC = 1.4 V to 1.6 V
V_CC = 1.65 V to 1.95 V
2.6
13.7
2.1
8.7
1.8
7.0
V_CC = 2.3 V to 2.7 V
1.5
5.4
V_CC = 3.0 V to 3.6 V
1.4
4.5
−40 °C to +125 °C Unit
Min
Max
2.1
12.6 ns
1.6
8.2 ns
1.4
6.5 ns
1.1
5.0 ns
1.0
4.3 ns
2.6
15.1 ns
2.1
9.6 ns
1.8
7.7 ns
1.5
6.0 ns
1.4
5.0 ns
74AUP1G04_2
Product data sheet
Rev. 02 — 28 June 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
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