UMA1017M Datasheet, PDF (7/16 Pages) NXP Semiconductors – Low-voltage frequency synthesizer for radio telephones

Philips Semiconductors
Low-voltage frequency synthesizer
for radio telephones
Product specification
UMA1017M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
V_DD
V_CC
∆V_CC−V_DD
V_n
V_{2, 3}
∆V_GND
P_tot
T_stg
T_amb
T_j
digital supply voltage
analog supply voltage
difference in voltage between V_CC and V_DD
voltage at pins 1, 6, 8, 9, 11 to 14 and 20
voltage at pins 2 and 3
difference in voltage between AGND and DGND
(these pins should be connected together)
total power dissipation
storage temperature
operating ambient temperature
maximum junction temperature
MIN.
−0.3
−0.3
−0.3
−0.3
−0.3
−0.3
−
−55
−30
−
MAX.
+5.5
+5.5
+5.5
V_DD + 0.3
V_CC + 0.3
+0.3
UNIT
V
V
V
V
V
V
150
mW
+125
°C
+85
°C
95
°C
HANDLING
Inputs and outputs are protected against electrostatic discharge in normal handling. However, to be totally safe, it is
desirable to take normal precautions appropriate to handling MOS devices.
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-a}
PARAMETER
thermal resistance from junction to ambient in free air
VALUE
120
UNIT
K/W
1995 Jul 10
7