TDA8040T Datasheet, PDF(7/16 Page) NXP Semiconductors

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TDA8040T Datasheet, PDF (7/16 Pages) NXP Semiconductors – Quadrature demodulator

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Philips Semiconductors

Quadrature demodulator

Objective speciï¬cation

TDA8040T

SYMBOL

PARAMETER

CONDITIONS MIN.

Voltage controlled oscillator (VCO)

fiVCO(min)

minimum input oscillator frequency

fiVCO(max)

maximum input oscillator frequency

300

âf

frequency deviation

âfdrift

âfshift

CNRosc

frequency drift

frequency shift

oscillator carrier-to-noise ratio

note 8

âVCC = 5% â

at 10 kHz;

note 9

at 100 kHz; â

note 9

Vosc(p-p)

required voltage drive level for external

100

oscillator injection (peak-to-peak value)

Rsource(osc) source resistance for external oscillator

generator

I and Q ampliï¬ers

VilQ(p-p)

I and Q channel input voltage

(peak-to-peak value)

note 10

VolQ(p-p)

I and Q channel output voltage

(peak-to-peak value)

note 10

at 1 dB gain 1.0

compression;

note 10

IM3

intermodulation distortion in the

I and Q channels

note 11

BIQ

Î±ct(IQ)

VO(IQ)

bandwidth of I and Q ampliï¬ers

at 0.5 dB

crosstalk between the I and Q channels note 12

DC output voltage level for the

I and Q ampliï¬er

ZI(IQ)

input impedance of the I and Q channels

ZO(IQ)

output impedance of the I and Q channels

Notes to the characteristics

1. Typical supply currents are defined for VCC = 5 V.

2. The I and Q channel output voltages are measured with the following conditions:

a) fi(RF) = 1â2fi(VCO) + 500 kHz (70.5 MHz)

b) the higher frequencies (140.5 MHz) are filtered out.

3. The I and Q channels gain is defined by GIQ = V--V---i-IR--Q--F--(--(r--rm-m---s-s--)-)- .

The gains are measured with the conditions defined in note 2.

TYP.

105

0.1

0.5

2.45

MAX.

21.4

100

UNIT

MHz

kHz

dBc/Hz

â¦

MHz

kâ¦

â¦

1996 Oct 08

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