TDA5145 Datasheet, PDF (7/24 Pages) NXP Semiconductors – Brushless DC motor drive circuit

Philips Semiconductors
Brushless DC motor drive circuit
Product specification
TDA5145
SYMBOL
PARAMETER
MOT0; centre tap
V_I
I_I
V_CSW
∆V_CSW
input voltage
input bias current
comparator switching level
variation in comparator switching
levels
V_hys
comparator input hysteresis
MOT1, MOT2 and MOT3; see Fig.5
V_DO
drop-out output voltage
∆V_OL
∆V_OH
I_LIM
t_r
t_f
V_DHF
variation in saturation voltage
between lower transistors
variation in saturation voltage
between upper transistors
current limiting
rise time switching output
fall time switching output
diode forward voltage (diode D_H)
V_DLF
diode forward voltage (diode D_L)
I_DM
peak diode current
+AMP IN and −AMP IN
V_I
input voltage
differential mode voltage without
‘latch-up’
I_b
C_I
V_offset
input bias current
input capacitance
input offset voltage
AMP OUT (open collector)
I_sink
output sink current
V_sat
saturation voltage
V_O
output voltage
SR
slew rate
G_tr
transfer gain
DIR
V_IH
HIGH level input voltage
V_IL
LOW level input voltage
I_IL
LOW level input current
I_IH
HIGH level input current
CONDITIONS
MIN.
TYP.
MAX. UNIT
−0.5 −
0.5 V < V_I < V_VMOT − 1.5 V −10
−
note 3
±20
±25
−
−
−
75
V_VMOT
V
−
µA
±30
mV
3
mV
−
µV
I_O = 100 mA
I_O = 1000 mA
I_O = 100 mA
−
0.9
−
1.6
−
−
I_O = −100 mA
−
−
V_VMOT = 10 V; R_O = 1.2 Ω 1.8
2.0
V_VMOT = 15 V; see Fig.6 5
10
V_VMOT = 15 V; see Fig.6 10
15
I_O = −500 mA;
−
−
notes 4 and 5; see Fig.1
I_O = 500 mA;
−1.5 −
notes 4 and 5; see Fig.1
note 5
−
−
1.05
V
1.85
V
180
mV
180
mV
2.5
A
15
µs
20
µs
1.5
V
−
V
2.5
A
−0.3 −
−
−
−
−
−
4
−
−
V_P − 1.7 V
±V_P
V
650
nA
−
pF
10
mV
40
−
I_I = 40 mA
−
1.5
−0.5 −
R_L = 330 Ω; C_L = 50 pF −
60
0.3
−
−
mA
2.1
V
+18
V
−
mA/µs
−
S
4 V < V_P < 18 V
4 V < V_P < 18 V
2.0
−
−
V
−
−
0.8
V
−
−20
−
µA
−
20
−
µA
June 1994
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