TDA5143T Datasheet, PDF (7/20 Pages) NXP Semiconductors – Brushless DC motor drive circuit

Philips Semiconductors
Brushless DC motor drive circuit
Product specification
TDA5143T
SYMBOL
PARAMETER
CONDITIONS
MIN.
MOT1, MOT2 and MOT3
V_DO
drop-out output voltage
I_O = 100 mA
−
I_O = 500 mA
−
∆V_OL
variation in saturation voltage
I_O = 100 mA
−
between lower transistors
∆V_OH
variation in saturation voltage
I_O = −100 mA
−
between upper transistors
I_LIM
t_r
t_f
V_DHF
current limiting
rise time switching output
fall time switching output
diode forward voltage (diode D_H)
V_VMOT = 10 V; R_O = 5.9 Ω 0.7
V_VMOT = 15 V; see Fig.4 7
V_VMOT = 15 V; see Fig.4 16
I_O = −500 mA;
−
notes 4 and 5; see Fig.1
V_DLF
diode forward voltage (diode D_L)
I_O = 500 mA;
−1.5
notes 4 and 5; see Fig.1
I_DM
peak diode current
note 5
−
+AMP IN and −AMP IN
V_I
input voltage
−0.3
differential mode voltage without
−
‘latch-up’
I_b
input bias current
−
C_I
input capacitance
−
V_offset
input offset voltage
−
AMP OUT (open collector)
I_sink
output sink current
V_sat
saturation voltage
V_O
output voltage
SR
slew rate
G_tr
transfer gain
40
I_I = 40 mA
−
−0.5
R_L = 330 Ω; C_L = 50 pF −
0.3
FG (open collector)
V_OL
LOW level output voltage
I_O = 1.6 mA
−
V_OH(max) maximum HIGH level output voltage
V_P
t_THL
HIGH-to-LOW transition time
C_L = 50 pF; R_L = 10 kΩ −
ratio of FG frequency and
−
commutation frequency
δ
duty factor
−
TYP.
0.93
1.3
−
−
0.85
12
23
−
−
−
−
−
−
4
−
−
1.5
−
60
−
−
−
0.5
1:2
50
MAX. UNIT
1.05
V
1.65
V
180
mV
180
mV
1.0
A
17
µs
30
µs
1.5
V
−
V
1
A
V_P − 1.7 V
±V_P
V
650
nA
−
pF
10
mV
−
mA
2.1
V
+18
V
−
mA/µs
−
S
0.4
V
−
V
−
µs
−
−
%
June 1994
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