PSMN6R0-30YLD_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology

NXP Semiconductors
PSMN6R0-30YLD
N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Symbol
Parameter
Conditions
Q_oss
output charge
V_GS = 0 V; V_DS = 15 V; f = 1 MHz;
T_j = 25 °C
Source-drain diode
V_SD
source-drain voltage I_S = 10 A; V_GS = 0 V; T_j = 25 °C; Fig. 15
t_rr
reverse recovery time I_S = 15 A; dI_S/dt = -100 A/µs; V_GS = 0 V;
Q_r
recovered charge
V_DS = 15 V; Fig. 16
[1]
t_a
reverse recovery rise
time
t_b
reverse recovery fall
time
S
softness factor
Min Typ Max Unit
-
11.5 -
nC
-
0.81 1.2 V
-
23.4 -
ns
-
12.6 -
nC
-
10.6 -
ns
-
12.8 -
ns
-
1.2 -
[1] includes capacitive recovery
60
I_D
(A)
48
10 V
4.5 V
003aal099
3.5 V
30
R_DSon
25
003aal100
20
36
15
24
V_GS = 3 V
10
12
0
0
2.8 V
2.6 V
0.25
0.5
0.75
1
V_DS (V)
5
0
0 2 4 6 8 10 12 14 16
V_GS (V)
Fig. 7. Output characteristics; drain current as a
Fig. 8. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
PSMN6R0-30YLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
10 February 2014
© NXP N.V. 2014. All rights reserved
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