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PSMN1R5-30BLE_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
NXP Semiconductors
PSMN1R5-30BLE
N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK
75
ID
(A)
60
45
30
3
3.5
4.5
10
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2.8
2.6
5
RDSon
(mΩ)
4
3
2
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15
2.4
1
VGS(V) = 2.2
0
0
0.5
1 VDS(V) 1.5
0
0
4
8
12
16
VGS (V)
Fig. 6. Output characteristics; drain current as a
Fig. 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
250
gfs
(S)
200
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150
100
50
0
0
25
50
75
100
ID (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values
250
ID
(A)
200
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150
100
50
Tj = 175 °C
Tj = 25 °C
0
0
1
2
3
4
VGS (V)
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
PSMN1R5-30BLE
Product data sheet
All information provided in this document is subject to legal disclaimers.
12 October 2012
© NXP B.V. 2012. All rights reserved
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