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PSMN1R4-30YLD_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology
NXP Semiconductors
PSMN1R4-30YLD
N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using
NextPowerS3 Technology
Symbol
Parameter
Conditions
Qoss
output charge
VGS = 0 V; VDS = 15 V; f = 1 MHz;
Tj = 25 °C
Source-drain diode
VSD
source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 15
trr
reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;
Qr
recovered charge
VDS = 15 V; Fig. 16
[1]
ta
reverse recovery rise
time
tb
reverse recovery fall
time
S
softness factor
[1] includes capacitive recovery
200
ID
10 V
(A)
160
4.5 V
3.5 V
aaa-011681
16
RDSon
(mΩ)
12
Min Typ Max Unit
-
40
-
nC
-
0.79 1.2 V
-
38.6 -
ns
-
34
-
nC
-
19.4 -
ns
-
19.3 -
ns
-
0.99 -
aaa-011682
120
VGS = 3 V
8
80
2.8 V
40
2.6 V
2.4 V
0
0
0.5
1
1.5
2
VDS (V)
4
0
0 2 4 6 8 10 12 14 16
VGS (V)
Fig. 7. Output characteristics; drain current as a
Fig. 8. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
PSMN1R4-30YLD
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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