PSMN041-80YL_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56

NXP Semiconductors
PSMN041-80YL
N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56
50
I_D
(A)
40
30
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10 V
4.5 V
3.5 V
V_GS = 3 V
100
R_DSon
80
60
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20
2.8 V
40
2.6 V
10
20
2.4 V
Fig. 6.
0
0
1
2
T_j = 25 °C; t_p = 300 μs
3
4
V_DS (V)
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
0
0
2
4
6
8
10
V_GS (V)
Drain-source on-state resistance as a function
of gate-source voltage; typical values
60
g_fs
(S)
50
003aak760
40
30
20
10
0
0
5
10
15
20
25
30
I_D (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values
40
I_D
(A)
32
003aaj102
24
16
8
175°C
T_j = 25°C
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V_GS (V)
Fig. 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
PSMN041-80YL
Product data sheet
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1 May 2013
© NXP B.V. 2013. All rights reserved
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