PSMN030-60YS_1010 Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET

NXP Semiconductors
PSMN030-60YS
N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET
Table 6. Characteristics …continued
Symbol
Parameter
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
Conditions
I_S = 15 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
I_S = 5 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 30 V
30
g_fs
(S)
20
003aae120
30
I_D
(A)
20
Min Typ Max Unit
-
0.87 1.2 V
-
25
-
ns
-
23
-
nC
003aae119
10
0
0
10
20
30
I_D (A)
10
0
0
T_j = 175 °C
T_j = 25 °C
2
4
6
V_GS (V)
Fig 5. Forward transconductance as a function of
drain current; typical values
1500
C
(pF)
1000
003aae121
C_iss
C_rss
500
0
0
5
10
15
20
V_GS (V)
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
50
I_D
(A)
40
30
10 8
003aae118
7 6.5
6
5.5
20
5
10
4.5
V_GS(V) = 4
0
0
0.5
1
1.5
2
V_DS(V)
Fig 7. Input and reverse transfer capacitances as a
Fig 8. Output characteristics: drain current as a
function of gate-source voltage; typical values
function of drain-source voltage; typical values
PSMN030-60YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 25 October 2010
© NXP B.V. 2010. All rights reserved.
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