PRLL5817 Datasheet, PDF (7/12 Pages) NXP Semiconductors – Schottky barrier diodes

Philips Semiconductors
Schottky barrier diodes
Product specification
PRLL5817; PRLL5818; PRLL5819
200
Tj
(oC)
100
MBE635
VRWM
δ = 0.2
VR
δ = 0.5
0.1
PR
(W)
VRWM
VR
δ = 0.5 δ = 0.2
0.05
MBE640
0
0
10
VR (V)
20
Fig.6
PRLL5817. Maximum permissible junction
temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.
0
0
10
VR (V)
20
Fig.7
PRLL5817. Reverse power dissipation as a
function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.
200
Tj
(oC)
100
MBE636
VRWM
δ = 0.2
VR _{δ = 0.5}
0.1
PR
(W)
0.05
VRWM
VR _{δ = 0.5}
δ = 0.2
MBE638
0
0
20
VR (V)
40
0
0
20
VR (V)
40
Fig.8
PRLL5818. Maximum permissible junction
temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.
Fig.9
PRLL5818. Reverse power dissipation as a
function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.
1999 Apr 22
7