PMXB56EN_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – 30 V, N-channel Trench MOSFET

NXP Semiconductors
PMXB56EN
30 V, N-channel Trench MOSFET
12
I_D
(A)
8
5.0 V
aaa-009041
3.5 V
3.2 V
3.0 V
10^-2
I_D
(A)
10^-3
10^-4
aaa-009043
min
typ
max
4
10^-5
2.6 V
V_GS = 2.5 V
0
0
1
2
T_j = 25 °C
2.8 V
2.7 V
3
4
V_DS (V)
10^-6
0
0.5
1.0
1.5
T_j = 25 °C; V_DS = 5 V
2.0
2.5
V_GS (V)
Fig. 7. Output characteristics: drain current as a
Fig. 8. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
300
2.5 V
R_DSon
(mΩ)
2.8 V
3.1 V
aaa-009044
3.5 V
300
R_DSon
(mΩ)
aaa-009045
200
200
100
4.5 V
100
T_j = 150 °C
V_GS = 10 V
T_j = 25 °C
0
0
4
T_j = 25 °C
8
12
I_D (A)
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
0
0
2
4
6
8
10
V_GS (V)
I_D = 3.2 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMXB56EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
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