PMR400UN Datasheet, PDF (7/12 Pages) NXP Semiconductors – N-channel mTrenchMOS ultra low level FET

Philips Semiconductors
PMR400UN
N-channel µTrenchMOS™ ultra low level FET
1
VGS(th)
(V)
0.8
0.6
0.4
0.2
03aj65
typ
min
10-3
ID
(A)
10-4
10-5
03am43
min
typ
0
-60
0
60
120 _{Tj (°C)} 180
10-6
0
0.2
0.4
0.6
0.8
VGS (V)
I_D = 0.25 mA; V_DS = V_GS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
T_j = 25 °C; V_DS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
102
C
(pF)
03an98
Ciss
10
Coss
Crss
1
10-1
1
10
102
VDS (V)
V_GS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 12665
Product data
Rev. 01 — 3 March 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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