PESD5V0R1BSF_15 Datasheet, PDF (7/12 Pages) NXP Semiconductors – Ultra low capacitance bidirectional ESD protection diode

NXP Semiconductors
PESD5V0R1BSF
Ultra low capacitance bidirectional ESD protection diode
10. Application information
The device is designed for the protection of one bidirectional data line from surge pulses
and ESD damage. The device is suitable on lines where the signal polarities are both
positive and negative with respect to ground. The device is not designed to be used on
lines connected to a DC supply.
line to be protected
ESD protection diode
Fig. 12. Application diagram
GND
aaa-002737
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. Minimize the path length between the device and the protected line.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.
11. Package outline
0.325
0.275
1
0.15
0.13
0.4
0.32
0.28
0.03
max
0.625
0.575
2
0.25
0.23
Dimensions in mm
Fig. 13. Package outline DSN0603-2 (SOD962-2)
14-12-03
PESD5V0R1BSF
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 May 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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