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| PEMB9_PUMB9_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – PNP/PNP resistor-equipped transistors; R1 = 10 k, R2 = 47 k | |||
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NXP Semiconductors
PEMB9; PUMB9
PNP/PNP resistor-equipped transistors; R1 = 10 kï, R2 = 47 kï
103
hFE
102
10
006aac789
(1)
(2)
(3)
-1
VCEsat
(V)
-10-1
006aac790
(1)
(2)
(3)
1
-10-1
-1
-10
-102
IC (mA)
VCE = ï5 V
(1) Tamb = 100 ï°C
(2) Tamb = 25 ï°C
(3) Tamb = ï40 ï°C
Fig 4. DC current gain as a function of collector
current; typical values
006aac791
-10
VI(on)
(V)
(1)
-1
(2)
(3)
-10-2
-10-1
-1
-10
-102
IC (mA)
IC/IB = 20
(1) Tamb = 100 ï°C
(2) Tamb = 25 ï°C
(3) Tamb = ï40 ï°C
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac792
-10
VI(off)
(V)
-1
(1)
(2)
(3)
-10-1
-10-1
-1
-10
-102
IC (mA)
VCE = ï0.3 V
(1) Tamb = ï40 ï°C
(2) Tamb = 25 ï°C
(3) Tamb = 100 ï°C
Fig 6. On-state input voltage as a function of
collector current; typical values
-10-1
-10-1
-1
-10
IC (mA)
VCE = ï5 V
(1) Tamb = ï40 ï°C
(2) Tamb = 25 ï°C
(3) Tamb = 100 ï°C
Fig 7. Off-state input voltage as a function of
collector current; typical values
PEMB9_PUMB9
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 â 22 November 2011
© NXP B.V. 2011. All rights reserved.
7 of 14
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