PBSS4032PT_15 Datasheet, PDF (7/14 Pages) NXP Semiconductors – 30 V, 2.4 A PNP low VCEsat (BISS) transistor

NXP Semiconductors
600
h_FE
400
200
006aab966
(1)
(2)
(3)
PBSS4032PT
30 V, 2.4 A PNP low V_CEsat (BISS) transistor
−3.0
I_C
(A)
−2.0
−1.0
I_B (mA) = −50
−40
−30
−20
−10
006aab967
−45
−35
−25
−15
−5
0
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = 100 °C
(2) T_amb = 25 °C
(3) T_amb = −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
−1.8
V_BE
(V)
−1.2
006aab968
(1)
(2)
−0.6
(3)
0.0
0.0
−1.0
−2.0
−3.0
−4.0
−5.0
V_CE (V)
T_amb = 25 °C
Fig 6. Collector current as a function of
collector-emitter voltage; typical values
−1.4
V_BEsat
(V)
−1.0
−0.6
006aab969
(1)
(2)
(3)
0.0
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
−0.2
−10^−1
−1
−10
−10²
−10³
−10⁴
I_C (mA)
V_CE = −2 V
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values
I_C/I_B = 20
(1) T_amb = −55 °C
(2) T_amb = 25 °C
(3) T_amb = 100 °C
Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS4032PT_1
Product data sheet
Rev. 01 — 18 December 2009
© NXP B.V. 2009. All rights reserved.
7 of 14