LWE2010S Datasheet, PDF (7/12 Pages) NXP Semiconductors – NPN microwave power transistor

Philips Semiconductors
NPN microwave power transistor
Product specification
LWE2010S
handbook, full pagewidth
1
0.5
2
2.3 GHz
0.2
2 GHz
Zi
5
+j
0
–j
10
0.2
0.5
1
2
5 10
∞
10
0.2
5
P_L1 = 0.8 W;
V_CE = 18 V;
Z_O = 50 Ω;
I_C = 110 mA.
0.5
1
2
MGA253
Fig.6 Input impedance as a function of frequency associated with optimum load impedances.
handbook, full pagewidth
1
0.5
2
0.2
ZL
2 GHz
5
2.3 GHz
10
+j
0
0.2
0.5
1
2
5 10
∞
–j
10
0.2
5
P_L1 = 0.8 W;
V_CE = 18 V;
Z_O = 50 Ω;
I_C = 110 mA.
1997 Feb 19
0.5
1
2
MGA252
Fig.7 Optimum load impedance as a function of frequency; typical values.
7